Transient Floating-Body Effects for Memory Applications in Fully-Depleted SOI MOSFETs


First Edition

Memory devices based on floating-body effects (FBE) in Silicon-on-Insulator (SOI) technology are among the most promising candidates for sub-100nm and low power Dynamic Random Access Memory (DRAM). This new type of DRAMs, called Zero-Capacitor RAM (Z-RAM), uses only one transistor in partially-depleted (PD) SOI technology and takes advantage of FBE which have been considered as parasitic phenomena until now. The Z-RAM programming principles are based on the threshold voltage VTH variations induced by the excess or lack of majority carriers in the floating body.

In this dissertation, a new floating-body effect, the Transient Floating Body Potential Effect (TFBPE), based on the body majority carriers non-equilibrium and on the dual dynamic gate coupling in standard fully-depleted (FD) SOI MOSFETs is presented for the first time. The TFBPE occurs in a specific gate bias range and can induce strong hysteresis of the gate and drain current characteristics although the FD SOI transistors are usually known to be immune against the FBE and their aftermaths. Adapted from the same physics principles as in the drain current hysteresis, that we called the Meta-Stable Dip (MSD) effect, a new concept of one-transistor capacitor-less memory was also proposed, the Meta-Stable DRAM (MSDRAM) which is dedicated for double-gate operations.

All the experimental results and physics interpretations were supported by 2D numerical simulations. A 1D semi-analytical model of the body potential for non-equilibrium states was also proposed. For the first time, this original body-potential model takes into account the majority carriers density variations, i.e., the quasi-Fermi level non-equilibrium versus a transient gate voltage scan in a FD MOS device.


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Specifications


Publisher
Presses universitaires de Louvain
Title Part
Numéro 160
Author
Maryline Bawedin,
Collection
Thèses de l'École polytechnique de Louvain
Language
English
Publisher Category
Applied Sciences > Electricity
BISAC Subject Heading
TEC000000 TECHNOLOGY & ENGINEERING
Onix Audience Codes
06 Professional and scholarly
CLIL (Version 2013-2019)
3069 TECHNIQUES ET SCIENCES APPLIQUEES
Title First Published
01 January 2007
Type of Work
Thesis

Paperback


Publication Date
01 January 2007
ISBN-13
9782874630880
Extent
Main content page count : 168
Code
76495
Dimensions
16 x 24 x 0.9 cm
Weight
278 grams
List Price
15.00 €
ONIX XML
Version 2.1, Version 3

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